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| 2N5194, 2N5195 Preferred Devices Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192. http://onsemi.com Features * Pb-Free Packages are Available* MAXIMUM RATINGS (Note 1) Rating Symbol VCEO VCB VEB IC IB 2N5194 60 60 2N5195 80 80 Unit Vdc Vdc Vdc Adc Adc 4 AMPERE POWER TRANSISTORS PNP SILICON 60 - 80 VOLTS II II IIIIIIIIIIIIIIIIIII I I II II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II I II I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I I II II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I III II I I I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I III I III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII II II I I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current 5.0 4.0 1.0 Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 40 320 W W/C C/W TJ, Tstg - 65 to + 150 TO-225AA CASE 77-09 STYLE 1 THERMAL CHARACTERISTICS Characteristic Symbol qJC Max Unit MARKING DIAGRAM Thermal Resistance, Junction-to-Case 3.12 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC registered data. YWW 2 N519xG Y WW 2N519x G = Year = Work Week = Device Code x = 4 or 5 = Pb-Free Package ORDERING INFORMATION Device 2N5194 2N5194G 2N5195 2N5195G Package TO-225 TO-225 (Pb-Free) TO-225 TO-225 (Pb-Free) Shipping 500 Units / Bulk 500 Units / Bulk 500 Units / Bulk 500 Units / Bulk *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 Preferred devices are recommended choices for future use and best overall value. 1 October, 2006 - Rev. 12 Publication Order Number: 2N5194/D II II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I I I II II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I II I II IIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2. Indicates JEDEC registered data. 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2) Current-Gain -- Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) Base-Emitter On Voltage (Note 3) (IC = 1.5 Adc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltage (Note 3) (IC = 1.5 Adc, IB = 0.15 Adc) (IC = 4.0 Adc, IB = 1.0 Adc) DC Current Gain (Note 3) (IC = 1.5 Adc, VCE = 2.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (Note 3) (IC = 0.1 Adc, IB = 0) 0.1 0.004 hFE , DC CURRENT GAIN (NORMALIZED) 0.3 1.0 0.7 0.5 10 7.0 5.0 0.2 2.0 3.0 (IC = 4.0 Adc, VCE = 2.0 Vdc) TJ = 150C 0.007 0.01 25C 0.02 Characteristic -55 C 0.03 0.05 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) Figure 1. DC Current Gain 2N5194, 2N5195 http://onsemi.com 2N5194 2N5195 2N5194 2N5195 2N5194 2N5195 2N5194 2N5195 2N5194 2N5195 2N5194 2N5195 2N5194 2N5195 VCEO(sus) Symbol VCE(sat) VBE(on) ICBO ICEO IEBO ICEX 0.5 hFE fT 1.0 Min 2.0 25 20 10 7.0 60 80 - - - - - - - - - - - - 2.0 VCE = 2.0 V VCE = 10 V Max 100 80 - - 1.2 0.6 1.4 1.0 0.1 0.1 0.1 0.1 2.0 2.0 1.0 1.0 - - - 3.0 4.0 mAdc mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc - 2 2N5194, 2N5195 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 1.6 1.2 IC = 10 mA 100 mA 1.0 A 3.0 A 0.8 TJ = 25C 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 50 70 100 200 300 500 Figure 2. Collector Saturation Region V, TEMPERATURE COEFFICIENTS (mV/C) 2.0 TJ = 25C 1.6 VOLTAGE (VOLTS) +2.5 +2.0 +1.5 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.005 0.01 0.020.03 0.05 *APPLIES FOR IC/IB hFE @ VCE TJ = -65C to +150C 1.2 *qVC for VCE(sat) 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 qVB for VBE 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 3. "On" Voltage RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) Figure 4. Temperature Coefficients 103 VCE = 30 Vdc IC, COLLECTOR CURRENT ( A) 102 TJ = 150C 101 100 100C REVERSE 25C ICES 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 107 VCE = 30 V 106 IC = 10 x ICES 105 IC = 2 x ICES 104 103 102 20 IC ICES 10-1 FORWARD 10- 2 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 5) 10- 3 +0.4 +0.3 +0.2 +0.1 40 60 80 100 120 140 160 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 5. Collector Cut-Off Region Figure 6. Effects of Base-Emitter Resistance http://onsemi.com 3 2N5194, 2N5195 TURN-ON PULSE VBE(off) Vin 0 APPROX -11 V VCC Vin RC RB SCOPE CAPACITANCE (pF) 500 TJ = 25C 300 200 t1 t2 Cjd << Ceb APPROX +9.0 V +4.0 V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS t1 7.0 ns 100 < t2 < 500 ms t3 < 15 ns DUTY CYCLE 2.0% 100 70 50 Ceb Ccb Vin APPROX -11 V t3 TURN-OFF PULSE 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Switching Time Equivalent Test Circuit 2.0 1.0 0.7 0.5 t, TIME ( s) 0.3 0.2 0.1 0.07 0.05 tr @ VCC = 10 V tr @ VCC = 30 V IC/IB = 10 TJ = 25C 2.0 1.0 0.7 0.5 t, TIME ( s) 0.3 0.2 ts Figure 8. Capacitance IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C tf @ VCC = 30 V 0.1 0.07 0.05 0.03 0.02 0.05 0.07 0.1 tf @ VCC = 10 V td @ VBE(off) = 2.0 V 0.03 0.02 0.2 0.3 0.05 0.07 0.1 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 3.0 4.0 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 3.0 4.0 Figure 9. Turn-On Time Note 1: 5.0 ms TJ = 150C dc SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25C BONDING WIRE LIMIT CURVES APPLY BELOW RATED VCEO 2N5194 2N5195 2.0 5.0 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 1.0 ms 100 ms Figure 10. Turn-Off Time 10 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 0.2 0.1 1.0 There are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on T J(pk) = 150_C. T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. At high-case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 11. Rating and Thermal Data Active-Region Safe Operating Area http://onsemi.com 4 2N5194, 2N5195 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.05 0.02 SINGLE PULSE 0.01 D = 0.5 0.2 0.1 qJC(max) = 3.12C/W 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 12. Thermal Response DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA tP PP PP t1 1/f t1 tP PEAK PULSE POWER = PP DUTY CYCLE, D = t1 f = A train of periodical power pulses can be represented by the model shown in Figure 13. Using the model and the device thermal response, the normalized effective transient thermal resistance of Figure 12 was calculated for various duty cycles. To find qJC(t), multiply the value obtained from Figure 12 by the steady state value qJC. Example: The 2N5193 is dissipating 50 watts under the following conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2). Using Figure 12, at a pulse width of 0.1 ms and D = 0.2, the reading of r(t1, D) is 0.27. The peak rise in junction temperature is therefore: DT = r(t) x PP x qJC = 0.27 x 50 x 3.12 = 42.2_C Figure 13. http://onsemi.com 5 2N5194, 2N5195 PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE Z -B- U Q F M C -A- 123 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M DIM A B C D F G H J K M Q R S U V STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 2N5194/D |
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